收藏本站
Si5519DU
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = - 250 μA
I D = 250 μA
I D = - 250 μA
I D = 250 μA
I D = - 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
20.74
- 18.2
4.0
1.83
V
mV/°C
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 12 V
N-Ch
P-Ch
N-Ch
P-Ch
0.6
- 0.6
1.8
- 1.8
100
- 100
V
nA
V DS = 20 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
P-Ch
N-Ch
-1
10
μA
V DS = - 20 V, V GS = 0 V, T J = 55 °C
P-Ch
- 10
On-State Drain Current b
I D(on)
V DS ≤ 5 V, V GS = 4.5 V
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = 4.5 V, I D = 6.1 A
N-Ch
P-Ch
N-Ch
25
- 10
0.030
0.036
A
Drain-Source On-State Resistance b
R DS(on)
V GS = - 4.5 V, I D = - 4.8 A
V GS = 2.5 V, I D = 1.6 A
P-Ch
N-Ch
0.053
0.052
0.064
0.063
Ω
V GS = - 2.5 V, I D = - 1.05 A
P-Ch
0.078
0.095
Forward Transconductance b
g fs
V DS = 10 V, I D = 6.7 A
V DS = - 10 V, I D = - 4.8 A
N-Ch
P-Ch
15
9.5
S
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C iss
C oss
C rss
Q g
N-Channel
V DS = 10 V, V GS = 0 V, f = 1 MHz
P-Channel
V DS = - 10 V, V GS = 0 V, f = 1 MHz
V DS = 10 V, V GS = 10 V, I D = 4.8 A
V DS = - 10 V, V GS = - 10 V, I D = - 3.2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
660
475
108
135
65
100
11.65
11.7
5.4
17.5
18
8.1
pF
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q gs
Q gd
R g
N-Channel
V DS = 10 V, V GS = 4.5 V, I D = 4.8 A
P-Channel
V DS = - 10 V, V GS = - 4.5 V, I D = - 3.2 A
f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
6.0
1.48
1.05
1.4
2.1
5.2
9.8
9.0
nC
Ω
www.vishay.com
2
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI5853CDC-T1-E3 MOSFET P-CH 20V 4A 1206-8
SI5853DDC-T1-E3 MOSFET P-CH D-S 20V 1206-8
SI5855CDC-T1-E3 MOSFET P-CH/SCHOTTKY 20V 1206-8
SI5857DU-T1-GE3 MOSFET P-CH D-S 20V PPAK CHIPFET
SI5858DU-T1-GE3 MOSFET N-CH 20V 6A PPAK CHIPFET
SI5903DC-T1-GE3 MOSFET DUAL P-CH 20V 2.1A 1206-8
SI5905BDC-T1-GE3 MOSFET DUAL P-CH D-S 8V 1206-8
SI5915BDC-T1-GE3 MOSFET P-CH 8V CHIPFET 1206-8
相关代理商/技术参数
SI552 制造商:SILABS 制造商全称:SILABS 功能描述:DUAL FREQUENCY VCXO (10 MHZ TO 1.4 GHZ)
SI5540 制造商:未知厂家 制造商全称:未知厂家 功能描述:SiPHY OC-192/STM-64 TRANSMITTER
SI5540-BC 制造商:未知厂家 制造商全称:未知厂家 功能描述:SiPHY OC-192/STM-64 TRANSMITTER
Si5580 功能描述:电机驱动器 PKG 5.5A 80VDC IND RoHS:否 制造商:Applied Motion 电机驱动类型:2035 Step 电源电压:12 V to 35 V 功率额定值:70 W 每转步距分辨率:200 to 400 框架大小 (NEMA):
SI5600 制造商:未知厂家 制造商全称:未知厂家 功能描述:SiPHY-TM OC-192/STM-64 SONET/SDH TRANSCEIVER
SI5600-BC 制造商:未知厂家 制造商全称:未知厂家 功能描述:SiPHY-TM OC-192/STM-64 SONET/SDH TRANSCEIVER
SI5600M100 制造商:NTE Electronics 功能描述:Cap Aluminum 5600uF 100V 20% (35 X 45mm) 10mm 2000 hr 85°C Bulk
SI5600M16 制造商:NTE 制造商全称:NTE Electronics 功能描述:SNAP-IN MOUNT ALUMINUM ELECTROLYTIC